Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer
Sajal Barman, Pramod Bhakuni, Shuvam Sarkar, Joydipto Bhattacharya,, Mohammad Balal, Mrinal Manna, Soumen Giri, Arnab Pariari, Tom\'a\v{s}, Sk\'ala, Markus Huecker, Rajib Batabyal, Aparna Chakrabarti, and Sudipta Roy, Barman

TL;DR
This study demonstrates the growth of bilayer stanene on a magnetic topological insulator with a buffer layer, revealing its electronic structure and structural properties through various spectroscopic and microscopic techniques.
Contribution
It introduces a method for growing bilayer stanene on a magnetic topological insulator using a buffer layer, supported by combined experimental and theoretical analysis.
Findings
Stanene forms a metallic state with a hexagonal Fermi surface.
A bandgap of 0.8 eV is observed at the K point.
The buffer layer is composed of Sn, Te, Bi/Sb with ordered structure.
Abstract
Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBiTe (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with density functional theory (DFT), reveals stanene related bands such as two hole-like bands and an inverted parabolic band around the point. An outer hole-like band traverses the Fermi level (\ef) and gives rise to a hexagonal Fermi surface, showing that stanene on MBST is metallic. In contrast, a bandgap of 0.8 eV is observed at the point. We find that DFT shows good agreement with ARPES only when the BL and hydrogen passivation of the top Sn layer are considered…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Quantum many-body systems
