Ultimate sharpness of the tunneling resonance in vertical heterostructures

TL;DR

This paper investigates the fundamental limits of resonance sharpness in vertical heterostructures of 2D electron systems, revealing that contact coupling and tunnel splitting set the maximum tunneling current and resonance steepness.

Contribution

It identifies the key factors limiting tunneling resonance sharpness, providing a theoretical model that predicts observable effects in graphene-based heterostructures.

Findings

Maximum tunneling current is limited by available electrons and tunnel coupling.

Optimal resonance occurs when contact coupling equals tunnel level splitting.

Model predicts observable effects in graphene/hBN/graphene heterostructures.

Abstract

Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It is commonly assumed that the height and width of the resonant peak in the tunneling current is determined by electron scattering and rotational misalignment of crystal structures of the 2DES. We identify two fundamental factors limiting the maximum height and steepness of the resonance: coupling to contacts and tunnel splitting of energy levels. The upper limit of the tunneling current is the number of electrons available for tunneling times half the tunnel coupling between the 2DES. As a result of a tradeoff between the contact-induced level broadening and contact resistance, the maximum current is only achievable when the coupling to contacts equals the tunnel level splitting. According to our model calculations, the limiting behavior can be observed in double-gated graphene/few-layer hexagonal boron nitride/graphene heterostructures.