Polarization study of single color centers in aluminum nitride

TL;DR

This study investigates the polarization properties of single color centers in aluminum nitride, revealing their uniform orientation distribution and presenting a rapid mapping technique for these quantum emitters.

Contribution

Introduces a fast method to map and analyze the polarization orientation of color centers in aluminum nitride, expanding understanding of their emission properties.

Findings

Color centers emit near 620 nm at room temperature.

Emitters are uniformly distributed in polarization orientation.

Developed a rapid mapping technique for single photon emitters.

Abstract

Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We present a technique to rapidly map an ensemble of these single photon emitters, identifying all emitters, not just those with absorption dipole parallel to the laser polarization. We demonstrate a fast technique to determine their absorption polarization orientation in the c-plane, finding they are uniformly distributed in orientation, in contrast to many other emitters in crystalline materials.