Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $\delta$-layer tunnel junctions
Juan P. Mendez, Denis Mamaluy

TL;DR
This paper investigates how electric dipoles, even without charge, influence tunneling currents in $\
Contribution
It reveals the anisotropic effects of electric dipoles on tunneling in $\\delta$-layer junctions, highlighting the dependence on conductivity regime and dipole orientation.
Findings
Dipoles significantly affect tunneling in low-bias regime regardless of orientation.
High-bias regime is less sensitive, mainly affected by high-moment dipoles perpendicular to tunneling.
Tunneling current's sensitivity varies with conductivity regime and dipole orientation.
Abstract
The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as -layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in -layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of -layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in -layer tunnel junctions. Here we demonstrate that zero-charge impurities, or electrical dipoles, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime and orientation and…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor materials and devices · Surface and Thin Film Phenomena
