A SWAP Gate for Spin Qubits in Silicon
Ming Ni, Rong-Long Ma, Zhen-Zhen Kong, Xiao Xue, Sheng-Kai Zhu, Chu Wang, Ao-Ran Li, Ning Chu, Wei-Zhu Liao, Gang Cao, Gui-Lei Wang, Guang-Can Guo, Xuedong Hu, Hong-Wen Jiang, Hai-Ou Li, Guo-Ping Guo

TL;DR
This paper demonstrates a fast, high-fidelity SWAP gate for silicon spin qubits, enabling scalable quantum architectures by improving qubit connectivity and transfer capabilities in silicon quantum dot systems.
Contribution
The authors realize a fast, tunable SWAP gate in silicon quantum dots with high fidelity, addressing previous limitations related to bandwidth and exchange coupling control.
Findings
Achieved a ~25 ns SWAP gate in silicon quantum dots.
Calibrated single-qubit phases during the SWAP operation.
Analyzed dominant error sources and estimated operation fidelity.
Abstract
With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve the connectivity problem by realizing both short- and long-range spin state transfer, and act as a basic two-qubit gate, which can reduce quantum circuit depth when combined with other two-qubit gates. However, for spin qubits in silicon quantum dots, high fidelity SWAP gates have not been demonstrated due to the requirements of large circuit bandwidth and a highly adjustable ratio between the strength of the exchange coupling J and…
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Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
