A Brief Review of Single Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide MOSFETs

TL;DR

This paper reviews the failure mechanisms of SiC MOSFETs under radiation, focusing on single event burnout, and evaluates design strategies and simulation methods for improving radiation tolerance in space applications.

Contribution

It provides a comprehensive review of SiC MOSFET degradation, failure mechanisms, and rad-tolerant design approaches, along with criteria for high-fidelity SEB simulation.

Findings

SiC MOSFETs are highly susceptible to SEB in radiation environments.

A merit system for evaluating radiation tolerance and electrical performance is proposed.

Criteria for accurate SEB simulation are identified and discussed.

Abstract

Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power electronic systems. The SiC MOSFET has been shown to be most prone to SEB of the radiation effects. The knowledge of SiC MOSFET device degradation and failure mechanisms are reviewed. Additionally, the viability of rad-tolerant SiC MOSFET designs and the methods of SEB simulation are evaluated. A merit system is proposed to consider the performance of radiation tolerance and nominal electrical performance. Criteria needed for high-fidelity SEB simulation are also reviewed. This paper stands as a necessary analytical review to intercede the development of rad-hard power devices for space and extreme environment applications.