Ions-induced Epitaxial Growth of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30%
Zhaohui Xing, Qing Du, Peiyuan Pang, Guangrong Jin, Tanghao Liu, Yang, Shen, Dengliang Zhang, Bufan Yu, Yue Liang, Jianxin Tang, Lei Wang, Guichuang, Xing, Jiangshan Chen, Dongge Ma

TL;DR
This paper presents an ions-induced heteroepitaxial growth method to create perovskite nanocomposites, significantly improving LED efficiency with an EQE over 30% by reducing trap states and enhancing light out-coupling.
Contribution
It introduces a novel ions-induced heteroepitaxial growth technique to assemble large-grain perovskite nanocomposites for highly efficient LEDs.
Findings
Achieved an external quantum efficiency of 31.0%.
Produced narrow emission linewidth of 18 nm.
Demonstrated high efficiency comparable to organic LEDs.
Abstract
Metal halide perovskites, a class of cost-effective semiconductor materials, are of great interest for modern and upcoming display technologies that prioritize the light-emitting diodes (LEDs) with high efficiency and excellent color purity. The prevailing approach to achieving efficient luminescence from pervoskites is enhancing exciton binding effect and confining carriers by reducing their dimensionality or grain size. However, splitting pervoskite lattice into smaller ones generates abundant boundaries in solid films and results in more surface trap states, needing exact passivation to suppress trap-assisted nonradiative losses. Here, an ions-induced heteroepitaxial growth method is employed to assembe perovskite lattices with different structures into large-sized grains to produce lattice-anchored nanocomposites for efficient LEDs with high color purity. This approach enables the…
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Taxonomy
TopicsPerovskite Materials and Applications · Quantum Dots Synthesis And Properties · Conducting polymers and applications
