Design and Performance of Parallel-channel Nanocryotrons in Magnetic Fields

TL;DR

This paper presents a modified nanocryotron design with parallel channels that improves performance and magnetic field resilience, enabling better operation in magnetic environments up to 1 Tesla.

Contribution

The study introduces a parallel-channel configuration in nanocryotrons, enhancing magnetic field performance and device robustness compared to traditional designs.

Findings

Increased gate signal sensitivity in magnetic fields

Higher operational gain with parallel channels

Reduced impact of vortices on device operation

Abstract

We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed at enhancing the device's performance in magnetic field environments. The common challenge in nTron technology is to maintain efficient operation under varying magnetic field conditions. Here we show that the adaptation of parallel channel configurations leads to an enhanced gate signal sensitivity, an increase in operational gain, and a reduction in the impact of superconducting vortices on nTron operation within magnetic fields up to 1 Tesla. Contrary to traditional designs that are constrained by their effective channel width, the parallel nanowire channels permits larger nTron cross sections, further bolstering the device's magnetic field resilience while improving electro-thermal recovery times due to reduced local inductance. This advancement in nTron design not only augments its functionality in magnetic fields but also broadens its applicability in technological environments, offering a simple design alternative to existing nTron devices.