Isolation of Single Donors in ZnO

TL;DR

This paper demonstrates the isolation of single indium donors in ZnO using plasma focused ion beam milling, enabling stable optical emission suitable for quantum technology applications.

Contribution

It introduces a method to isolate and identify single indium donors in ZnO, advancing the integration of single donors into optical quantum devices.

Findings

Single indium donors successfully isolated in ZnO.

Optical emission from donors is stable with narrow linewidths.

Potential for scalable quantum device integration.

Abstract

The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.