Demonstration of a monocrystalline GaAs-$\beta$-Ga$_2$O$_3$ p-n heterojunction

TL;DR

This paper demonstrates the fabrication of a high-performance monocrystalline GaAs-$eta$-Ga$_2$O$_3$ heterojunction diode with excellent rectification and current density, using semiconductor grafting technology.

Contribution

It introduces a novel transfer printing method to create monocrystalline GaAs/$eta$-Ga$_2$O$_3$ heterojunctions with superior electrical performance.

Findings

Achieved an ideality factor of 1.23.

Demonstrated a rectification ratio of 8.04E9 at +/- 4V.

Revealed a current density of 2500 A/cm$^2$ at +5 V.

Abstract

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$\beta$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$\Omega\cdot$cm$^2$.