Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers
Lorenzo Sponza, Van Binh Vu, Elisa Serrano Richaud, Hakim Amara,, Sylvain Latil

TL;DR
This study reveals that near 30-degree twisted boron nitride bilayers develop universal flat bands and strong excitonic effects, independent of stacking, due to moiré-induced K-valley scattering, with implications for other 2D materials.
Contribution
The paper introduces a simple triangular model to explain the emergence of flat bands in 30-degree twisted bilayers, validated against DFT, highlighting stacking-independent electronic features.
Findings
Flat bands appear above the conduction minimum near 30° twist.
These flat bands cause intense optical absorption peaks.
The phenomenon is due to moiré-induced K-valley scattering.
Abstract
We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moir\'e supercell develop identical band structures, irrespective of their stacking sequence. This band structure features a bundle of flat bands laying slightly above the bottom conduction state which is responsible for an intense peak at the onset of the absorption spectrum. These results suggest the presence of strong, stable and stacking-independent excitons in boron nitride 30\degree-twisted bilayers. By carefully analyzing the electronic structure and its spatial distribution, we elucidate the origin of these states as moir\'e-induced K-valley…
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Taxonomy
Topics2D Materials and Applications · Boron and Carbon Nanomaterials Research · Fullerene Chemistry and Applications
