Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon

TL;DR

This paper uses soft X-ray ARPES to directly image and analyze ultra-thin, high-density electron liquids in delta-doped silicon layers, revealing detailed electronic properties and differences between arsenic and phosphorus dopants.

Contribution

It demonstrates the application of SX-ARPES for direct momentum-space imaging of buried delta-doped layers, providing new insights into their electronic confinement and dopant-dependent properties.

Findings

Achieved detailed measurement of 2DEL electronic structure in silicon delta-layers.

Found arsenic delta-layers have better electronic confinement than phosphorus.

Measured ultra-thin, dense electron liquids with high accuracy.

Abstract

Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron spectral function that can be measured by angle-resolved photoemission spectroscopy (ARPES). Here, buried 2DEL $\delta$-layers in silicon are measured with soft X-ray (SX) ARPES to obtain detailed information about their filled conduction bands and extract device-relevant properties. This study takes advantage of the larger probing depth and photon energy range of SX-ARPES relative to vacuum ultraviolet (VUV) ARPES to accurately measure the $\delta$-layer electronic confinement. The measurements are made on ambient-exposed samples and yield extremely thin ($\approx 1$ $nm$) and dense ($\approx$ $10^{14}$ $cm^2$) 2DELs. Critically, this method is used to show that $\delta$-layers of arsenic exhibit better electronic confinement than $\delta$-layers of phosphorus fabricated under identical conditions.