Twist Angle Dependence of Exciton Resonances in WSe$_2$/MoSe$_2$ Moir\'e Heterostructures
Chirag Chandrakant Palekar, Joakim Hagel, Barbara Rosa, Samuel Brem,, Ching-Wen Shih, Imad Limame, Martin von Helversen, Sefaattin Tongay, Ermin, Malic, Stephan Reitzenstein

TL;DR
This study investigates how the twist angle in WSe2/MoSe2 heterobilayers affects exciton resonances, revealing a redshift in interlayer emission and suggesting complex influences beyond simple moiré potential effects.
Contribution
It provides systematic experimental and theoretical analysis of twist-angle effects on exciton behavior, highlighting the role of atomic reconstruction and dielectric screening.
Findings
Observed a 100 meV redshift in interlayer emission with increasing twist angle
The microscopic theory predicts a blueshift, indicating additional factors like atomic reconstruction influence the results
Evidence of twist-angle-dependent band offset between monolayers
Abstract
Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-twist angle. The twist angle drastically alters the interlayer excitonic response by determining the spatial modulation, confining moir\'e potential, and atomic reconstruction in those systems. Nonetheless, the impact of the interlayer twist angle on the band alignment of the monolayers composing the heterostructure has received scant attention in the current research. Here, we systematically investigate the twist-angle dependence of intra- and inter-layer excitons in twisted WSe2/MoSe2 heterobilayers. By performing photoluminescence excitation spectroscopy, we identify the twist-angle dependence of interlayer emission response, where an energy redshift of about 100 meV was observed for increasing twist…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
