180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor
S. Akatsuka, M. Sakano, T. Yamamoto, T. Nomoto, R. Arita, R. Murata,, T. Sasagawa, K. Watanabe, T. Taniguchi, M. Kitamura, K. Horiba, K. Sugawara,, S. Souma, T. Sato, H. Kumigashira, K. Shinokita, H. Wang, K. Matsuda, S., Masubuchi, T. Machida, and K. Ishizaka

TL;DR
This study demonstrates that stacking two centrosymmetric ReSe$_2$ monolayers with a 180° twist breaks spatial inversion symmetry, leading to emergent spin-split bands and potential spintronic applications.
Contribution
The paper introduces a novel method of creating a noncentrosymmetric ReSe$_2$ bilayer through twisting, revealing new spin-related phenomena not present in natural monolayers.
Findings
Inversion symmetry is broken in the twisted bilayer ReSe$_2$.
Emergent spin splitting of approximately 50 meV observed.
Spin-momentum locking state can be realized in twisted centrosymmetric layers.
Abstract
We have fabricated a 180-twisted bilayer ReSe by stacking two centrosymmetric monolayer ReSe flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.
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Taxonomy
Topics2D Materials and Applications · Machine Learning in Materials Science
