Scalable High-Mobility Graphene/hBN Heterostructures

TL;DR

This paper presents a scalable method for creating high-quality graphene-hBN heterostructures with high carrier mobility, suitable for advanced electronic and optoelectronic applications.

Contribution

It introduces a fully scalable approach to produce graphene-hBN heterostructures with high mobility, verified over large areas with consistent quality.

Findings

Graphene mobilities exceeding 10,000 cm^2/Vs in ambient conditions.

Over 100 devices measured with an average mobility of 7500 ± 850 cm^2/Vs.

Scalable growth of hBN films via ion beam-assisted physical vapor deposition.

Abstract

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available $SiO_2/Si$ and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition on copper. The structural, chemical, and electronic properties of the heterostructure were investigated by atomic force microscopy, Raman spectroscopy, and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding $10,000 cm^2/Vs$ in ambient conditions, 30% higher than those directly measured on $SiO_{2}/Si$. We prove the scalability of our approach by measuring more than 100 transfer length method devices over a centimeter scale, which present an average carrier mobility of $7500 \pm 850 cm^{2}/Vs$. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.