Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

TL;DR

This paper demonstrates a reconfigurable magnon-based logic-in-memory device utilizing multiferroic materials, enabling electrical control of magnon transport and logic operations with potential for low-power, scalable in-memory computing.

Contribution

It introduces a novel magnon logic-in-memory device using multiferroic bismuth ferrite, enabling electrical manipulation and reconfigurability of magnon-based logic.

Findings

Magnon information can be encoded to ferromagnetic bits via spin torque.

Ferroelectric polarization modulates magnon spin-torque electrically.

Reconfigurable logic-in-memory operations are demonstrated in a single device.

Abstract

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.