Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

TL;DR

This paper reveals that polymer residues on 2D material memristors can cause resistive switching, highlighting the importance of proper interface characterization to accurately assess 2D materials' potential in memristor technology.

Contribution

It demonstrates that polymer residues can induce resistive switching in 2D memristors, emphasizing the need for atomic-scale analysis to correctly interpret device mechanisms.

Findings

Polymer residues can cause resistive switching similar to filamentary mechanisms.

Proper interface characterization is essential to avoid misinterpreting switching origins.

Performance of residue-based memristors mimics that of genuine 2D material memristors.

Abstract

Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult to remove from the 2D material interfaces without damage. Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D material memristors. Here, we demonstrate that the parasitic residues themselves can be the origin of RS. We emphasize the necessity to fabricate appropriate reference structures and employ atomic-scale material characterization techniques to properly evaluate the potential of 2D materials as the switching layer in vertical memristors. Our polymer-residue-based memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their performance parameters are strikingly similar to commonly reported 2D material memristors. This reveals that the exclusive consideration of electrical data without a thorough verification of material interfaces can easily lead to misinterpretations about the potential of 2D materials for memristor applications.