Radiation Hardness and Defects Activity in PEA2PbBr4 Single Crystals
Andrea Ciavatti, Vito Foder\`a, Giovanni Armaroli, Lorenzo Maserati,, Beatrice Fraboni, Daniela Cavalcoli

TL;DR
This study investigates the charge transport and defect activity in PEA2PbBr4 2D perovskite crystals, revealing trap states and mechanisms behind its enhanced radiation tolerance and stability for X-ray detection applications.
Contribution
The paper applies photo induced current transient spectroscopy (PICTS) to 2D perovskite PEA2PbBr4, uncovering trap states and their evolution under X-ray exposure, explaining its improved radiation hardness.
Findings
Identified three trap states with different activation energies.
Trap state evolution correlates with radiation tolerance.
PEA2PbBr4 shows reduced aging effects compared to 3D perovskites.
Abstract
Metal halide perovskites (MHPs) are low-temperature processable hybrid semiconductor materials with exceptional performances that are revolutionizing the field of optoelectronic devices. Despite their great potential, commercial deployment is hindered by MHPs lack of stability and durability, mainly attributed to ions migration and chemical interactions with the device electrodes. To address these issues, 2D layered MHPs have been investigated as possible device interlayers or active material substitutes to reduce ion migration and improve stability. Here we consider the 2D perovskite PEA2PbBr4 that was recently discussed as very promising candidate for X-ray direct detection. While the increased resilience of PEA2PbBr4 detectors have already been reported, the physical mechanisms responsible for such improvement compared to the standard "3D" perovskites are not still fully understood.…
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Taxonomy
TopicsPerovskite Materials and Applications · Ga2O3 and related materials · Luminescence Properties of Advanced Materials
