Engineering the electronic, magnetic, and optical properties of GaP monolayer by substitutional doping: a first-principles study

TL;DR

This study uses first-principles calculations to explore how substitutional doping alters the structural, electronic, magnetic, and optical properties of GaP monolayers, revealing potential for diverse nanoelectronic applications.

Contribution

It provides a comprehensive analysis of doping effects on GaP monolayers, including band gap tuning, magnetism, and optical properties, demonstrating their feasibility for advanced device applications.

Findings

Doping induces indirect to direct band gap transition.

Oxygen doping makes the system metallic.

Some doped structures exhibit spin-dependent optical properties.

Abstract

In this paper we present a thorough first-principles based density functional theory study of the structural stability, electronic, magnetic, and optical properties of pristine and doped gallium phosphide (GaP) monolayers. The pristine GaP monolayer is found to have a periodically buckled structure, with an indirect band gap of 2.15 eV. The doping by X (B, Al, In, C, Si, Ge, Sn, Zn, Cd) at the Ga site, and Y (N, As, Sb, O, S, Se, Te, Zn, Cd) at the P site is considered, and an indirect to direct transition is observed after doping by In at the Ga site. For several cases, significant changes in the band gap are seen after doping, while system becomes metallic when O is substituted at the P site. The spin-polarized band structures are calculated for the monolayers with doping-induced magnetism, and we find that for some cases a direct band gap appears for one of the spin orientations. For such cases, we investigate the intriguing possibility of spin-dependent optical properties. Furthermore for several cases, the band gap is very small for one of the spin orientations, suggesting the possibility of engineering half metallicity by doping. For the layers with direct band gaps, the calculated optical absorption spectra are found to span a wide energy range in the visible and ultraviolet regions. The calculated formation energies of both the pristine and doped structures are quite small, indicating that the laboratory realization of such structures is quite feasible. On the whole, our results suggest that the doped GaP monolayer is a material with potentially a wide range of applications in nanoelectronics, spintronics, optoelectronics, solar cells, etc.