A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

TL;DR

This paper presents a low-temperature, BEOL-compatible ferroelectric memory device using WOx and HfZrO4, suitable for neural networks with stable analog switching and low variation.

Contribution

It introduces a novel, low-temperature fabrication process for ferroelectric memory compatible with BEOL and CMOS, demonstrating promising device performance.

Findings

Cycle-to-cycle variation <10%

ON/OFF ratio up to 10

Good linearity in analog potentiation/depression

Abstract

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.