A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

TL;DR

This paper presents a low-temperature fabricated ferroelectric analog non-volatile memory compatible with back-end-of-line processes, demonstrating promising properties for neural network applications and CMOS integration.

Contribution

It introduces a novel ferroelectric memory device using WOx and HfZrO4 that is compatible with BEOL processes and shows excellent performance metrics.

Findings

Cycle-to-cycle variation <10%

ON/OFF ratio up to 10

Good linearity in analog potentiation/depression

Abstract

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.