Simulation of the response of SiPMs Part II: with saturation effects

TL;DR

This paper introduces a Monte Carlo simulation model for SiPMs that accounts for saturation effects, after-pulses, cross-talk, and electronic voltage drops, providing insights into their nonlinear response under various conditions.

Contribution

It presents a comprehensive simulation tool that models SiPM response in the nonlinear regime, including effects like saturation, after-pulses, and cross-talk, validated against experimental data.

Findings

Simulation accurately reproduces SiPM response under high photon flux

Model captures effects of after-pulses and cross-talk on SiPM signals

Results align with published experimental data across different SiPM configurations

Abstract

A Monte Carlo program is presented which simulates the response of SiPMs in the nonlinear regime, where the number of Geiger discharges from photons and/or from dark counts in the time interval given by the pulse shape of a single Geiger discharge, approaches or exceeds the number of SiPM pixels. The model includes the effects of after-pulses, of prompt and delayed cross-talk, and of the voltage drop over the load resistance of the readout electronics. The results of the simulation program are compared to published results from SiPMs with different number of pixels for different intensities and time distributions of photons, dark-count rates, SiPM pulse shapes, and probabilities of cross-talk and after-pulsing.