Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling
Arthur Lin, Matthew F. Doty, Garnett W. Bryant

TL;DR
This paper investigates how incorporating Bi into GaAs barriers in InAs quantum dot molecules enhances hole tunnel coupling and spin-mixing, improving potential for optical qubit control.
Contribution
It demonstrates the effects of Bi alloying on tunnel coupling, strain, and resonance shifts in InAs quantum dot molecules using atomistic modeling.
Findings
Hole tunnel coupling increases threefold with 7% Bi alloy.
Asymmetric strain causes resonance shifts.
Device geometries can optimize Bi's benefits.
Abstract
Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically stacking two QDs to create a quantum dot molecule (QDM). The two dots can be resonantly tuned to form "molecule-like" coupled hole states from the hybridization of hole states otherwise localized in each respective dot. Furthermore, spin-mixing of the hybridized states in dots offset along their stacking direction enables qubit rotation to be driven optically, allowing for an all-optical qubit control scheme. Increasing the magnitude of this spin mixing is important for optical quantum control protocols. To enhance the tunnel coupling and spin-mixing across the dots, we introduce Bi in the GaAs inter-dot barrier. Previously, we showed how to model…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Quantum Computing Algorithms and Architecture
