Ferroelectric Schottky diodes of CuInP$_2$S$_6$ nanosheet

TL;DR

This paper reports the fabrication and characterization of CuInP$_2$S$_6$ nanosheet-based ferroelectric Schottky diodes, demonstrating resistive switching due to ferroelectric polarization, with potential device applications.

Contribution

It introduces a new ferroelectric heterostructure device using mechanically exfoliated CuInP$_2$S$_6$ nanosheets and characterizes its resistive switching behavior.

Findings

Observed four bias-dependent resistive states.

Attributed switching to ferroelectric Schottky diode formation.

Demonstrated potential for ferroelectric device applications.

Abstract

Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP$_2$S$_6$ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current-voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.