Direct topological insulator transitions in three dimensions are destabilized by non-perturbative effects of disorder
Yixing Fu, Justin H. Wilson, David A. Huse, J. H. Pixley

TL;DR
This paper shows that non-perturbative disorder effects destabilize the expected direct topological insulator transitions in three dimensions, leading to a diffusive metal phase instead of a critical point, impacting experimental interpretations.
Contribution
It demonstrates through numerical analysis that rare disorder-induced states destabilize the Dirac semimetal critical point in 3D topological insulators, challenging previous perturbative predictions.
Findings
Rare regions induce a diffusive metal phase.
The Dirac semimetal critical point is destabilized.
Experimental implications for doped topological insulators.
Abstract
We reconsider the phase diagram of a three-dimensional topological insulator in the presence of short-ranged potential disorder with the insight that non-perturbative rare states destabilize the noninteracting Dirac semimetal critical point separating different topological phases. Based on our numerical data on the density of states, conductivity, and wavefunctions, we argue that the putative Dirac semimetal line is destabilized into a diffusive metal phase of finite extent due to non-perturbative effects of rare regions. We discuss the implications of these results for past and current experiments on doped topological insulators.
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Quantum many-body systems
