Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
Rong-Long Ma, Sheng-Kai Zhu, Zhen-Zhen Kong, Tai-Ping Sun, Ming Ni,, Yu-Chen Zhou, Yuan Zhou, Gang Luo, Gang Cao, Gui-Lei Wang, Hai-Ou Li and, Guo-Ping Guo

TL;DR
This paper demonstrates high-fidelity singlet-triplet state readout in silicon quantum dots and introduces machine learning to improve accuracy beyond traditional threshold methods, especially for relaxed triplet states.
Contribution
It presents a machine learning-based readout method that surpasses threshold-based techniques in accuracy and relaxation independence for singlet-triplet state classification.
Findings
Achieved 97.59% fidelity with threshold method
Machine learning improves fidelity to 99.67%
Machine learning reduces misjudgment of relaxed triplet states
Abstract
High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin blockade in a Si-MOS double quantum dot device and demonstrate an average singlet-triplet state readout fidelity of 97.59% by the threshold method. We reveal the inherent deficiency of the threshold method for the relaxed triplet state classification and introduce machine learning as a relaxation-independent readout method to reduce the misjudgment. The readout fidelity for classifying the simulated single-shot traces can be improved to 99.67% by machine learning method, better than the threshold…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
