Analog Content-Addressable Memory from Complementary FeFETs
Xiwen Liu, Keshava Katti, Yunfei He, Paul Jacob, Claudia Richter, Uwe, Schroeder, Santosh Kurinec, Pratik Chaudhari, Deep Jariwala

TL;DR
This paper introduces an analog CAM cell using complementary FeFETs that enables high-density, fast, and accurate similarity search, significantly advancing compute-in-memory capabilities for AI and data-intensive tasks.
Contribution
It presents a novel analog CAM design based on FeFETs that performs parallel similarity search with over 40 match windows, improving density and speed over existing architectures.
Findings
Outperforms ternary CAM in few-shot learning accuracy by 5%.
Achieves 3x higher memory density and over 100x faster search speed than CPU/GPU.
Enables 1-step inference in kernel regression, 1000x faster than traditional methods.
Abstract
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlooked. Current parallel search architectures, namely content-addressable memory (CAM), often use binary, which restricts density and functionality. We present an analog CAM (ACAM) cell, built on two complementary ferroelectric field-effect transistors (FeFETs), that performs parallel search in the analog domain with over 40 distinct match windows. We then deploy it to calculate similarity between vectors, a building block in the following two machine learning problems. ACAM outperforms ternary…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Machine Learning and ELM
