Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

TL;DR

This paper explores how the ambipolar conduction property of graphene transistors can be exploited to create simplified, multifunctional high-frequency analog electronic circuits such as amplifiers, mixers, and modulators.

Contribution

It introduces new design strategies for high-frequency analog circuits that leverage the ambipolarity of graphene transistors, enabling multifunctionality and simplification.

Findings

Design of high-frequency power amplifiers using ambipolar graphene transistors

Implementation of mixers and frequency multipliers leveraging ambipolarity

Enhanced multifunctionality in HF analog circuits through ambipolar device control

Abstract

Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V-shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities specially in the HF domain. We present, here, new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene-based transistors.