Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO$_3$/SrTiO$_3$ Interface

TL;DR

This study investigates how manipulating the Dirac point in the (111) LaTiO$_3$/SrTiO$_3$ interface affects non-linear electrical responses, highlighting the role of spin-orbit interaction and magnetic field orientation.

Contribution

It demonstrates how in-plane and out-of-plane magnetic fields influence the Dirac point and non-linear transport, providing new insights into spin-orbit effects at oxide interfaces.

Findings

Non-linear resistance rises sharply at a critical in-plane magnetic field.

Out-of-plane magnetic fields suppress the non-linear effects.

The Dirac point's position relative to the Fermi surface controls non-linear transport.

Abstract

Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce non-linear transport effects ($V\sim I^2$). Here, we focus on such effects to study the role of SOI in the (111) LaTiO$_3$/SrTiO$_3$ interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall-response through the entire gate-voltage range studied. We report a pronounced rise in the non-linear resistance at a critical in-plane field $H_{cr}$. This rise disappears with a small out-of-plane field. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi surface, and consequently changes the symmetry of the Fermi contours and intensifies the non-linear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the non-linear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario.