Electronic and spin transport in Bismuthene with magnetic impurities

TL;DR

This paper investigates how magnetic impurities affect electronic and spin transport in Bismuthene, a topological insulator, using ab initio simulations to understand edge state conductivity at large scales.

Contribution

It provides a detailed ab initio analysis of magnetic impurity interactions with Bismuthene and explores their impact on edge state transport properties in large samples.

Findings

Magnetic impurities modify edge state conductivity.

Simulation results show potential for localized edge states.

Insights into spin transport mechanisms in topological insulators.

Abstract

Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and develop quantum computers. In this work we explore the role of magnetic impurities in the transport properties of topological insulators, in particular, we study the effect on the edge states conductivity. By means of realistic $\it{ab}$ $\it{initio}$ calculations we simulate the interaction between magnetic adatoms and topological insulators, furthermore, our main goal is to obtain the transport properties for large samples as it would be possible to localize edge states at large scales.