Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current
James H. Cullen, Dimitrie Culcer

TL;DR
This paper presents a detailed quantum mechanical calculation of the extrinsic spin Hall effect in topological insulators, highlighting the significant role of disorder mechanisms like side jump and skew scattering in contributing to the spin current.
Contribution
It provides the first comprehensive quantum mechanical analysis of extrinsic spin Hall effect in topological insulators, emphasizing the importance of disorder effects such as side jump and skew scattering.
Findings
Extrinsic contribution to spin current is comparable to intrinsic effects.
Side jump scattering is the dominant extrinsic mechanism.
Calculated spin susceptibility is too small to account for experimental spin torques.
Abstract
The substantial amount of recent research into spin torques has been accompanied by a revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many materials, including topological insulator/ferromagnet devices, Weyl semimetals, and van der Waals heterostructures. In general the relative sizes of competing spin torque mechanisms remain poorly understood. Whereas a consensus is beginning to emerge on the evaluation of a conserved spin current, the role of extrinsic disorder mechanisms in the spin-Hall effect has not been clarified. In this work we present a comprehensive calculation of the extrinsic spin Hall effect while focussing on the bulk states of topological insulators as a prototype system and employing a fully quantum mechanical formalism to calculate the proper spin current. Our calculation of the proper spin current employs a 4x4 k.p…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Magnetic properties of thin films
