Defect tolerance of lead-halide perovskite (100) surface relative to bulk: band bending, surface states, and characteristics of vacancies
Oleg Rubel, Xavier Rocquefelte

TL;DR
This study investigates the defect formation, electronic properties, and defect tolerance of lead-halide perovskite (100) surfaces compared to bulk, revealing their high optoelectronic performance despite surface defects.
Contribution
It provides a detailed analysis of surface vacancies, their formation energies, and the role of spin-orbit coupling in defect tolerance of lead-halide perovskite surfaces.
Findings
Surface vacancies create shallow states that are electronically harmless.
Lead-iodine divacancies dominate over lead-only vacancies at surfaces.
Spin-orbit coupling enhances defect tolerance by delocalizing defect states.
Abstract
We characterized the formation of vacancies at a surface slab model and contrasted the results with the bulk of lead-halide perovskites using cubic and tetragonal CsPbI as representative structures. The defect-free CsI-terminated (100) surface does not trap charge carriers. In the presence of defects (vacancies), the surface is expected to exhibit -type behavior. The formation energy of cesium vacancies is lower at the surface than in the bulk, while iodine vacancies have a similar energy (around 0.250.4 eV) within the range of chemical potentials compatible with solution processing synthesis conditions. Lead-iodine divacancies () are expected to dominate over lead-only vacancies at the surfaces. Major surface vacancies create shallow host-like energy states with a small Franck-Condon shift, making them electronically…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsPerovskite Materials and Applications · Quantum Dots Synthesis And Properties · Semiconductor Quantum Structures and Devices
