Erbium-doped WS$_2$ with Down- and Up-Conversion Photoluminescence Integrated on Silicon for Heterojunction Infrared Photodetection

TL;DR

This paper demonstrates the synthesis of Erbium-doped WS$_2$ nanosheets with up- and down-conversion photoluminescence integrated on silicon, leading to high-performance room-temperature infrared photodetectors with enhanced responsivity and noise suppression.

Contribution

It introduces a novel rare earth doping strategy for 2D WS$_2$ to enable efficient infrared emission and integrates these nanosheets with silicon to create high-performance heterojunction photodetectors.

Findings

Achieved visible to near-infrared emission from WS$_2$:Er nanosheets.

Demonstrated a silicon-based infrared photodetector with high responsivity (~39.8 mA/W).

Suppressed dark current and noise through van der Waals heterojunctions.

Abstract

The integration of 2D nanomaterials with silicon is expected to enrich the applications of 2D functional nanomaterials and to pave the way for next-generation, nanoscale optoelectronics with enhanced performances. Herein, a strategy for rare earth element doping has been utilized for the synthesis of 2D WS$_2$:Er nanosheets to achieve up-conversion and down-conversion emission ranging from visible to the near-infrared region. Moreover, the potential integration of the synthesized 2D nanosheets in silicon platforms is demonstrated by the realization of an infrared photodetector based on a WS$_2$:Er/Si heterojunction. These devices operate at room temperature and show a high photoresponsivity of ~39.8 mA/W (at 980 nm) and a detectivity of 2.79 $\times$ 10$^{10}$ cm Hz$^{1/2}$ W$^{-1}$. Moreover, the dark current and noise power density are suppressed effectively by van der Waals assisted p-n heterojunction. This work fundamentally contributes to establishing infrared detection by rare element doping of 2D materials in heterojunctions with Si, at the forefront of infrared 2D materials-based photonics.