Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature

TL;DR

This paper demonstrates room-temperature spin injection across a chiral perovskite/III-V interface, enabling spin accumulation in a semiconductor LED, advancing spintronic optoelectronic applications.

Contribution

It introduces a novel method for spin injection using chiral perovskite/III-V interfaces, achieving spin accumulation without magnetic fields.

Findings

Spin accumulation detected with ~15% polarization.

Clean semiconductor/semiconductor interface confirmed.

Chiral perovskites can enable spin control in semiconductor devices.

Abstract

Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The spin accumulation in the MQW is detected via emission of circularly polarized light with a degree of polarization of up to ~15%. The chiral perovskite/III-V interface was characterized with X-ray photoemission spectroscopy (XPS), cross sectional scanning Kelvin probe force microscopy, and cross section transmission electron microscopy (TEM) imaging, showing a clean semiconductor/semiconductor interface where the fermi-level can equilibrate. These findings demonstrate chiral perovskite semiconductors can transform well-developed semiconductor platforms to ones that can also control spin.