Registration of terahertz irradiation with silicon carbide nanostructures

TL;DR

This paper investigates how silicon carbide nanostructures respond to terahertz irradiation, revealing intrinsic THz generation and edge channel currents influenced by magnetic flux, using electrical measurements and a quantum Faraday effect model.

Contribution

It introduces a model based on the quantum Faraday effect to explain THz-induced currents and demonstrates intrinsic THz generation in silicon carbide nanostructures through electrical detection.

Findings

THz irradiation induces currents in edge channels.

Intrinsic THz generation is observed via EDEPR.

Features in voltage dependence relate to magnetic flux changes.

Abstract

The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz irradiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value.