Terahertz emission from silicon carbide nanostructures

TL;DR

This paper reports the first observation of terahertz electroluminescence from silicon carbide nanostructures on silicon, induced by longitudinal current and explained by a quantum Faraday effect model.

Contribution

It introduces a novel method to generate terahertz radiation using silicon carbide nanostructures and explains the underlying quantum Faraday effect mechanism.

Findings

Electroluminescence detected in the terahertz range from silicon carbide nanostructures.

Electroluminescence spectra observed at 3.4 and 0.12 THz frequencies.

Theoretical model links current-induced magnetic flux changes to terahertz emission.

Abstract

For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain-source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation.