A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys
Robin Miquel (1, 2, 3), Thomas Cabout (1), Olga Cueto (2),, Beno\^it Skl\'enard (2), Mathis Plapp (3) ((1) STMicroelectronics, Crolles,, France, (2) Universit\'e Grenoble-Alpes, CEA, Leti, Grenoble, France, (3), Laboratoire PMC, CNRS, Ecole polytechnique

TL;DR
This paper introduces a comprehensive multi-physics model combining phase field and electro-thermal simulations to accurately replicate the behavior of Ge-rich Ge$_2$Sb$_2$Te$_5$ phase change memories during operation.
Contribution
It presents a novel fully coupled multi-physics model that integrates phase change dynamics with electro-thermal effects for Ge-rich Ge$_2$Sb$_2$Te$_5$ alloys.
Findings
Successfully reproduces experimental memory operation behaviors
Demonstrates accurate simulation of phase change processes
Provides a tool for designing improved phase change memory devices
Abstract
A self-consistent model for the simulation of Ge-rich GeSbTe phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the material. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsPhase-change materials and chalcogenides · Solid-state spectroscopy and crystallography
