Impact of TCO Microstructure on the Electronic Properties of Carbazole-based Self-Assembled Monolayers

TL;DR

This study examines how the microstructure of transparent conductive oxides affects the work function distribution of carbazole-based self-assembled monolayers, providing insights for improving hole transport layers in perovskite solar cells.

Contribution

It reveals the relationship between TCO microstructure and WF distribution of SAMs, highlighting the importance of microstructure control for device performance.

Findings

Grain orientation influences local potential distribution.

Amorphous ITO shows homogeneous WF distribution.

Adding NiOx buffer layer homogenizes surface potential.

Abstract

Carbazole-based self-assembled monolayers (PACz-SAMs), anchored via their phosphonic acid group on a transparent conductive oxide (TCO) have demonstrated excellent performance as hole-selective layers in inverted perovskite solar cells. However, the influence of the TCO microstructure on the work function (WF) shift after SAM anchoring as well as the WF variations at the micro/nanoscale have not been extensively studied yet. Herein, we investigate the effect of the Sn-doped In2O3 (ITO) microstructure on the WF distribution upon 2PACz-SAMs and NiOx/2PACz-SAMs application. For this, ITO substrates with amorphous and polycrystalline (featuring either nanoscale or microscale-sized grains) microstructures are studied. A correlation between the ITO grain orientation and 2PACz-SAMs local potential distribution was found via Kelvin probe force microscopy and electron backscatter diffraction. These variations vanish for amorphous ITO or when adding an amorphous NiOx buffer layer, where a homogeneous surface potential distribution is mapped. Ultraviolet photoelectron spectroscopy confirmed the ITO WF increase after 2PACz-SAMs deposition. Considering the importance of polycrystalline TCOs as high mobility and broadband transparent electrodes, we provide insights to ensure uniform WF distribution upon application of hole transport SAMs, which is critical towards enhanced device performance.