Automated Characterization of a Double Quantum Dot using the Hubbard Model

TL;DR

This paper introduces an automated method to extract Hubbard model parameters from quantum dot stability diagrams, improving characterization efficiency and accuracy for quantum information applications.

Contribution

The paper presents a novel automated algorithm using dual annealing optimization to determine Hubbard parameters from experimental data, enhancing quantum dot array analysis.

Findings

Extracted tunnel couplings range from 69 to 517 μeV.

Method shows good agreement with established measures.

Discusses limitations of the current approach.

Abstract

Semiconductor quantum dots are favorable candidates for quantum information processing due to their long coherence time and potential scalability. However, the calibration and characterization of interconnected quantum dot arrays have proven to be challenging tasks. One method to characterize the configuration of such an array involves using the Hubbard model. In this paper, we present an automated characterization algorithm that efficiently extracts the Hubbard model parameters, including tunnel coupling and capacitive coupling energy, from experimental stability diagrams. Leveraging the dual annealing optimizer, we determine the set of Hubbard parameters that best characterize the experimental data. We compare our method with an alternate, well-established measure of the tunnel coupling and find good agreement within the investigated regime. Our extracted tunnel couplings range from 69 to 517 $\mu$eV, and we discuss the limiting factors of our method.