Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices

TL;DR

This paper uses micromagnetic simulations to analyze how circuit delay, noise, and temperature affect the reliability of voltage-controlled magnetization switching in magnetic-topological-insulator devices, highlighting their robustness and potential for low-power spintronics.

Contribution

It provides the first detailed theoretical analysis of the effects of circuit delay, noise, and temperature on WER in MTI-based devices, demonstrating robustness and room-temperature operation.

Findings

WER can be below 10^{-4} at room temperature

Device operation is robust against circuit delay and noise

Larger SOT enhances thermal stability

Abstract

We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of the micromagnetic simulation. This device realizes magnetization switching via spin-orbit torque(SOT) and voltage-controlled magnetic anisotropy (VCMA) which originate from 2D-Dirac electronic structure. We reveal that the device operation is extremely robust against circuit delay and signal-to-noise ratio. We demonstrate that the WER on the order of approximately $10^{-4}$ or below is achieved around room temperature due to steep change in VCMA. Also, we show that the larger SOT improves thermal stability factor. This study provides a next perspective for developing voltage-driven spintronic devices with ultra-low power consumption.