Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications

TL;DR

This paper analyzes InAlN/GaN HEMT devices through extensive measurements and simulations, proposing a novel short T-gate structure with recess to optimize high-frequency performance for Ku-band applications.

Contribution

It introduces a new short T-gate with recess structure on thin GaN buffer, enhancing high-frequency performance and reducing short channel effects in InAlN/GaN HEMTs.

Findings

Optimized device parameters for Ku-band applications.

Demonstrated high cut-off and maximum oscillation frequencies.

Validated design improvements through simulations.

Abstract

An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using analytical equations. RF performance of the device was also studied and device parameters were extracted following small signal equivalent circuit model. Extensive simulations in Silvaco TCAD were also carried out by varying stem height, gate length and incorporating back barrier to optimize the suitability of this device in Ku-band by reducing the detrimental Short Channel Effects (SCEs). In this paper a novel structure i.e., a short length T gate with recess, on thin GaN buffer to achieve high cut-off frequency (f$_T$) and high maximum oscillating frequency (f$_{max}$) apt for Ku-band applications is also proposed.