Non-volatile optical phase shift in ferroelectric hafnium zirconium oxide

TL;DR

This paper demonstrates a CMOS-compatible ferroelectric hafnium zirconium oxide (HZO) material enabling non-volatile, large-scale optical phase shifts in silicon photonics, paving the way for energy-efficient programmable photonic circuits.

Contribution

The study introduces the first application of ferroelectric HZO for non-volatile optical phase shifting in silicon photonics, showing significant phase shifts with low loss and long persistence.

Findings

Achieved approximately pi phase shift in a 4.5-mm-long device.

Observed a negative change in refractive index at 1.55 um wavelength.

Confirmed non-volatile multi-level phase shift with > 10000 s persistence.

Abstract

A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a novel CMOS-compatible ferroelectric material for non-volatile optical phase shifting in Si photonics is of utmost importance. Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. Although extensively studied for ferroelectric transistors and memories, its application in photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric HZO deposited on a SiN optical waveguide. We observed a negative change in refractive index at a 1.55 um wavelength in the pristine device regardless of the direction of an applied electric filed. We achieved approximately pi phase shift in a 4.5-mm-long device with negligible optical loss. The non-volatile multi-level optical phase shift was confirmed with a persistence of > 10000 s. This phase shift can be attributed to the spontaneous polarization within the HZO film along the external electric field. We anticipate that our results will stimulate further research on optical nonlinear effects, such as the Pockels effect, in ferroelectric HZO. This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based programmable PICs are poised to become indispensable in diverse applications, ranging from optical fiber communication and artificial intelligence to quantum computing and sensing.