Tunable Magnetism and Valleys in VSiZ$_3$ monolayers

TL;DR

This paper introduces a new class of 2D MAZ$_3$ monolayers, exemplified by VSiN$_3$, which exhibit tunable magnetism and valley polarization, enabling potential applications in spintronics and valleytronics.

Contribution

It proposes a novel 2D monolayer structure with controllable magnetic and valley properties, demonstrated through first-principles calculations.

Findings

VSiN$_3$ is a non-magnetic semiconductor with degenerate valleys.

Carrier doping induces ferromagnetism and enhances valley splitting.

Berry curvature leads to valley-contrasting anomalous Hall effects.

Abstract

Two-dimensional magnetism and valleys have recently emerged as two significant research areas, with intriguing properties and practical uses in advanced information technology. Considering the importance of these two areas and their couplings, controllable creations of both the magnetism and valley polarization are highly sought after. Based on first-principles calculations, we propose a new class of two-dimensional monolayers with a chemical formula of MAZ$_3$, which is viewed as a 2H-MZ$_2$ trilayer passivated by the A-Z bilayer on its one side. Taking VSiN$_3$ as an example, the MAZ$_3$ monolayers are found to exhibit tunable magnetism and valleys. For the intrinsic VSiN$_3$ monolayer, it is a non-magnetic semiconductor, with multiple degenerate valleys and trigonal warping near $K_\pm$ points in the band structure. Besides, the bands have spin splittings owing to the spin-orbit coupling. Under a moderate carrier doping, the monolayer becomes a Stoner ferromagnet, which enhances the spin splittings of the valence band and generates valley splittings. Moreover, the Berry curvature is valley contrasting, leading to distinct valley-spin related anomalous Hall currents as the doping concentration increases. Our work opens up new way to modulate the spin splittings and valley splittings via electric means, and provides opportunities for exploring advanced spintronic and valleytronic devices.