Progress on two-dimensional ferrovalley materials
Ping Li, Bang Liu, Wei-Xi Zhang, Zhi-Xin Guo

TL;DR
This review summarizes recent advances in two-dimensional ferrovalley materials, focusing on their valley polarization mechanisms, modulation techniques, and potential applications in valleytronics.
Contribution
It provides a comprehensive overview of the development, physical mechanisms, and modulation strategies of ferrovalley materials in two-dimensional systems.
Findings
Progress in understanding valley polarization mechanisms.
Various physical methods to modulate valley polarization.
Future prospects for valleytronics applications.
Abstract
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research interest. The intrinsic spontaneous valley polarization in two-dimensional magnetic systems, ferrovalley material, provides convenience for detecting and modulating the valley. In this review, we first introduce the development of valleytronics. Then, the valley polarization forms by the p, d, and f-orbit that are discussed. Following, we discuss the investigation progress of modulating the valley polarization of two-dimensional ferrovalley materials by multiple physical fields, such as electric, stacking mode, strain, and interface. Finally, we look forward to the future developments of valleytronics.
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Taxonomy
Topics2D Materials and Applications · Electronic and Structural Properties of Oxides · Ga2O3 and related materials
