Circuit-theoretic phenomenological model of an electrostatic gate-controlled bi-SQUID

TL;DR

This paper introduces a circuit-theoretic model for a bi-SQUID that incorporates gate-controlled effects, accurately simulating its behavior under magnetic and electric fields, with implications for high-precision sensor applications.

Contribution

The novel model captures the influence of electric gating on bi-SQUIDs, aligning well with experimental data and aiding understanding of superconducting field effects.

Findings

Model accurately simulates gate-controlled bi-SQUID behavior.

Supercurrent suppression due to electric gating is effectively modeled.

Potential for tuning SQUID sensors via gate voltages is demonstrated.

Abstract

A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is the novel ability to capture the resultant behaviour of the device when a strong electric field is applied to its Josephson junctions by utilising gate electrodes. The model is used to simulate an all-metallic SNS (Al-Cu-Al) bi-SQUID, where good agreement is observed between the simulated results and the experimental data. The results discussed in this work suggest that the primary consequences of the superconducting field effect induced by the gating of the Josephson junctions are accounted for in our minimal model; namely, the suppression of the junctions super-current. Although based on a simplified semi-empirical model, our results may guide the search for a microscopic origin of this effect by providing a means to model the voltage response of gated SQUIDs. Also, the possible applications of this effect regarding the operation of SQUIDs as ultra-high precision sensors, where the performance of such devices can be improved via careful tuning of the applied gate voltages, are discussed at the end of the paper.