Room-Temperature Anomalous Hall Effect in Graphene in Interfacial Magnetic Proximity with EuO Grown by Topotactic Reduction
Satakshi Pandey, Simon Hettler, Raul Arenal, Corinne Bouillet, Aditi, Raman Moghe, Stephane Berciaud, Jerome Robert, Jean Francois Dayen, David, Halley

TL;DR
This study demonstrates that EuO thin films can be grown on graphene via topotactic reduction, inducing a high-temperature anomalous Hall effect due to proximity-induced spin polarization, with potential for room-temperature spintronic applications.
Contribution
It introduces a method to create EuO/graphene heterostructures with high-temperature magnetic properties and anomalous Hall effect, highlighting the role of strain and magnetic polarons in stabilizing ferromagnetism.
Findings
EuO films exhibit ferromagnetism with a Curie temperature decreasing with Eu2O3 thickness.
The EuO/graphene heterostructure shows an anomalous Hall effect persisting up to 350K.
High strain stabilizes magnetic polarons, enabling high-temperature magnetic behavior.
Abstract
We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO smooth layer, without noticeable structural changes in the underlying chemical vapor deposited (CVD) graphene. The obtained EuO films exhibit ferromagnetism, with a Curie temperature that decreases with the initially deposited Eu2O3 layer thickness. By adjusting the thickness of the Eu2O3 layer below 7 nm, we promote the formation of EuO at the very graphene interface: the EuO/graphene heterostructure demonstrates the anomalous Hall effect (AHE), which is a fingerprint of proximity-induced spin polarization in graphene. The AHE signal moreover persists above Tc up to 350K due to a robust super-paramagnetic phase in EuO. This original high-temperature…
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Taxonomy
TopicsAtomic and Subatomic Physics Research · Quantum and electron transport phenomena · Magnetic Field Sensors Techniques
