Understanding defects in amorphous silicon with million-atom simulations and machine learning
Joe D. Morrow, Chinonso Ugwumadu, David A. Drabold, Stephen R., Elliott, Andrew L. Goodwin, Volker L. Deringer

TL;DR
This study uses large-scale atomistic simulations combined with machine learning to classify and understand the complex defect structures in amorphous silicon, challenging existing models and revealing new defect behaviors.
Contribution
It introduces a universal defect classification in amorphous silicon using machine learning on a million-atom model, providing new insights into defect environments and clustering.
Findings
Fivefold-coordinated atoms have diverse local environments.
Fivefold defects tend to cluster, unlike threefold defects.
The study suggests revising the floating-bond defect model.
Abstract
The structure of amorphous silicon is widely thought of as a fourfold-connected random network, and yet it is defective atoms, with fewer or more than four bonds, that make it particularly interesting. Despite many attempts to explain such "dangling-bond" and "floating-bond" defects, respectively, a unified understanding is still missing. Here, we show that atomistic machine-learning methods can reveal the complex structural and energetic landscape of defects in amorphous silicon. We study an ultra-large-scale, quantum-accurate structural model containing a million atoms, and more than ten thousand defects, allowing reliable defect-related statistics to be obtained. We combine structural descriptors and machine-learned local atomic energies to develop a universal classification of the different types of defects in amorphous silicon. The results suggest a revision of the established…
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Taxonomy
TopicsThin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Machine Learning in Materials Science
