Switchable in-plane anomalous Hall effect by magnetization orientation in monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$

TL;DR

This paper predicts a stable monolayer ferromagnetic material, Mn3Si2Te6, exhibiting a switchable in-plane anomalous Hall effect controllable by magnetization orientation, with potential applications in spintronics.

Contribution

It introduces a novel 2D ferromagnetic monolayer with a substantial, switchable in-plane anomalous Hall effect driven by magnetization direction.

Findings

Monolayer Mn3Si2Te6 is ferromagnetic with collinear Mn moments.

The material exhibits a significant, symmetry-protected in-plane anomalous Hall effect.

Strain can modulate electronic states and lead to near quantized Hall conductivity.

Abstract

In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional ferromagnetic monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ with collinear ordering of Mn moments in the basal plane. Moreover, we reveal that the monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ possesses a substantial periodic IPAHE due to the threefold rotational symmetry, which can be switched by changing the magnetization orientation by external magnetic fields. In addition, we briefly discuss the impacts of moderate strains on the electronic states and AHE, which lead to a near quantized Hall conductivity. Our work provides a potential platform for realizing a sizable and controllable IPAHE that greatly facilatates the application of energy-efficient spintronic devices.