Switching of ferrotoroidal domains via an intermediate mixed state in the multiferroic Y-type hexaferrite Ba$_{0.5}$Sr$_{1.5}$Mg$_2$Fe$_{12}$O$_{22}$

TL;DR

This study investigates how magnetic fields switch ferrotoroidal domains in a multiferroic hexaferrite, revealing a temperature-dependent mixed state that impacts potential memory device applications.

Contribution

It provides a comprehensive analysis of the deterministic switching mechanism involving an intermediate mixed state in Y-type hexaferrite, combining multiple experimental techniques.

Findings

Identification of a temperature-dependent mixed state during switching

Complete description of the magnetic field switching process

Implications for high-speed memory device development

Abstract

We report a detailed study of the magnetic field switching of ferrotoroidal/multiferroic domains in the Y-type hexaferrite compound Ba$_{0.5}$Sr$_{1.5}$Mg$_2$Fe$_{12}$O$_{22}$. By combining data from SQUID magnetometry, magneto-current measurements, and resonant X-ray scattering experiments, we arrive at a complete description of the deterministic switching, which involves the formation of a temperature-dependent mixed state in low magnetic fields. This mechanism is likely to be shared by other members of the hexaferrite family, and presents a challenge for the development of high-speed read-write memory devices based on these materials.