Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control
Sean E. Sullivan, Jonghoon Ahn, Tao Zhou, Preetha Saha, Martin V., Holt, Supratik Guha, F. J. Heremans, Manish Kumar Singh

TL;DR
This paper demonstrates a laser annealing technique to locally control the crystalline phase of TiO$_2$ thin films, enabling precise tuning of Er$^{3+}$ optical properties for quantum photonics applications.
Contribution
It introduces a method for quasi-deterministic localization of Er$^{3+}$ emitters in TiO$_2$ by inducing localized phase transitions with laser annealing.
Findings
Laser annealing induces anatase to rutile phase transition in TiO$_2$.
Optical transition of Er$^{3+}$ blueshifts by 13 nm after phase change.
The phase conversion efficiency increases linearly with laser power.
Abstract
With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er emitters into a thin film TiO platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er emitters in TiO thin films on Si. Using both nanoscale…
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Taxonomy
TopicsSilicon Nanostructures and Photoluminescence · Photonic and Optical Devices · Semiconductor Lasers and Optical Devices
